An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET

Solid-State Electronics

Volumn 52, Issue 2, 2008, Pages 305-311

  Kaur, Harsupreet ^a   Kabra, Sneha ^a   Haldar, Subhasis ^b   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Asymmetric gate stack; Graded channel profile; Hot carrier effects; Short channel effects; Surrounding gate MOSFET

Indexed keywords

ELECTRON MOBILITY; GATES (TRANSISTOR); HOT CARRIERS; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

ASYMMETRIC GATE STACK; GRADED CHANNEL PROFILE; HOT CARRIER EFFECTS; SHORT CHANNEL EFFECTS; SURROUNDING GATE MOSFET;

MOSFET DEVICES;

EID: 38049028320     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.006     Document Type: Article

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