The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETS

IEICE Transactions on Electronics

Volumn E88-C, Issue 6, 2005, Pages 1122-1126

  Fathi, Ehsanollah ^a   Behnam, Ashkan ^a   Hashemi, Pouya ^a   Esfandyarpour, Behzad ^a   Fathipour, Morteza ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

Author keywords

DIBL; Dual metal gate; MOSFET; Short channel effects; Stacked gate

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

DUAL METAL STACK GATE (DMSG); SHORT CHANNEL EFFECTS; STACKED GATE;

MOSFET DEVICES;

EID: 25844530851     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e88-c.6.1122     Document Type: Article

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