Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (gm/Ids)

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 155-159

  Kranti, A ^a   Rashmi, ^a   Haldar, S ^a,b   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Double gate (DG) MOSFET; Short channel effects; Transconductance generation efficiency; Transconductance to current ratio; Vertical surrounding gate (VSG) MOSFET

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); OPTIMIZATION; TRANSCONDUCTANCE; ULSI CIRCUITS;

DOUBLE GATES (DG); TRANSCONDUCTANCE-TO-CURRENT RATIO; VERTICAL SORROUNDING GATES (VSG);

MOSFET DEVICES;

EID: 0037210881     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00320-9     Document Type: Article

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