An 0.1-μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 820-822

  Shin, Hyungsoon ^a   Lee, Seungjun ^a  

^a Ewha Womans University   (South Korea)

Author keywords

Hot carriers; Integrated circuit doping; MOSFET's

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; HOT CARRIERS; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; LEAKAGE CURRENTS; MONTE CARLO METHODS; PERFORMANCE; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES; VELOCITY;

ASYMMETRIC HALO BY LARGE ANGLE TILT IMPLANT; HOT CARRIER EFFECTS; INTEGRATED CIRCUIT DOPING; SHORT CHANNEL EFFECT;

MOSFET DEVICES;

EID: 0032650119     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753725     Document Type: Article

References (11)

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