The potential of neutral beams for deep silicon nanostructure etching

Journal of Physics D: Applied Physics

Volumn 41, Issue 2, 2008, Pages

  Kokkoris, George ^a   Tserepi, Angeliki ^a   Gogolides, Evangelos ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ETCHING; NANOSTRUCTURED MATERIALS; NEUTRON FLUX; PASSIVATION; SILICON;

NEUTRAL BEAMS; SIDEWALL BOWING; SIDEWALL PASSIVATION;

NEUTRON BEAMS;

EID: 38049026777     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/2/024004     Document Type: Article

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