Highly anisotropic gate electrode patterning in neutral beam etching using F2 gas chemistry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 2063-2068

  Noda, Shuichi ^a,b   Hoshino, Yasuyuki ^c   Ozaki, Takuya ^a   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c Showa Denko Materials Co   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DISSOCIATION; ETCHING; FREE RADICALS; POLYCRYSTALLINE MATERIALS; SILICON;

GAS CHEMISTRY; NEUTRAL BEAM SOURCES; POLY-SI GATES;

ELECTRODES;

EID: 31144463291     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2050660     Document Type: Article

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