Generation of low-energy neutral beam for Si etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 5, 2004, Pages 1948-1955

  Kim, S J ^a   Wang, S J ^a   Lee, J K ^a   Lee, D H ^b   Yeom, G Y ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; ANISOTROPY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON TRAPS; ION SOURCES; MIRRORS; PARTICLE BEAMS; REFLECTION; SILICON;

ION ENERGY; ION-INDUCED ETCHING; LOW-ANGLE REFLECTORS; NEUTRAL BEAMS;

ETCHING;

EID: 8444251788     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1774198     Document Type: Article

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