Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

Microelectronics Journal

Volumn 36, Issue 7, 2005, Pages 673-677

  Marty, F ^a   Rousseau, L ^a   Saadany, B ^a   Mercier, B ^a   Francais O ^a   Mita, Y ^b   Bourouina, T ^a  

^a ESIEE PARIS   (France)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

3D; DRIE; HARMS; Micromachining; Silicon; Sub micron

Indexed keywords

ANISOTROPY; INDUCTIVELY COUPLED PLASMA; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PASSIVATION; SILICON WAFERS; THREE DIMENSIONAL;

DRIE; HARMS; SILICON MICROSTRUCTURES; SUB-MICRON;

REACTIVE ION ETCHING;

EID: 22144494719     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.04.039     Document Type: Article

References (10)

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