Requirements of neutral beam source regarding gas pressure and neutral angle for nanoscale etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 10, 2004, Pages 7261-7266

  Kim, Sung Jin ^a   Lee, Hae June ^b   Yeom, Geun Young ^c   Koo, Jae Lee ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Pusan National University   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Angle distribution; Charge up damage; Etching; Neutral beam; Pressure; Simulation

Indexed keywords

ANISOTROPY; ASPECT RATIO; COMPUTER SIMULATION; ELECTRON CYCLOTRON RESONANCE; MICROSTRUCTURE; PLASMA COLLISION PROCESSES; PLASMA SOURCES; PRESSURE;

ANGLE DISTRIBUTION; CAPACITIVELY COUPLED PLASMAS (CCP); CHARGE-UP DAMAGE; NEUTRAL BEAMS;

PLASMA ETCHING;

EID: 10844236493     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7261     Document Type: Article

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