Evolution of surface morphology of GaN thin films during photoelectrochemical etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1832-1835

  Leach, J H ^a   Ozgur U ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOPATTERNING; NANOPOROUS STRUCTURE; PHOTOELECTROCHEMICAL ETCHING;

ETCHING; GALLIUM NITRIDE; SURFACE MORPHOLOGY;

THIN FILMS;

EID: 37149043215     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2794055     Document Type: Article

References (21)

1. M. S. Minsky, M. White, and E. L. Hu, Appl. Phys. Lett. 0003-6951 10.1063/1.115689 68, 1531 (1996).
2. C. Youtsey, I. Adesida, L. T. Romano, and G. Bulman, Appl. Phys. Lett. 0003-6951 10.1063/1.120758 72, 560 (1998).
3. C. Youtsey, I. Adesida, and G. Bulman, Appl. Phys. Lett. 0003-6951 10.1063/1.119365 71, 2151 (1997).
4. C. Youtsey, L. T. Romano, and I. Adesida, Appl. Phys. Lett. 0003-6951 10.1063/1.122005 73, 797 (1998).
5. P. Visconti, M. A. Reshchikov, K. M. Jones, D. F. Wang, R. Cingolani, H. Morko̧, R. J. Molnar, and D. J. Smith, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1378009 19, 1328 (2001).
6. V. Popa, I. M. Tiginyanu, V. V. Ursaki, O. Volcius, and H. Morko̧, Semicond. Sci. Technol. 0268-1242 10.1088/0268-1242/21/12/002 21, 1518 (2006).
7. C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, Appl. Phys. Lett. 0003-6951 10.1063/1.2437056 90, 053112 (2007).
8. V. V. Ursaki, I. M. Tiginyanu, O. Volciuc, V. Popa, V. A. Skuratov, and H. Morko̧, Appl. Phys. Lett. 0003-6951 10.1063/1.2723076 90, 161908 (2007).
9. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 0003-6951 10.1063/1.1645992 84, 855 (2004).
10. O. Yilmazoglu, D. Pavlidis, Y. M. Litvin, I. M. Tiginyanu, K. Matamba, H. L. Hartnagel, V. G. Litovcheriko, and A. Evtukh, Appl. Surf. Sci. 220, 46 (2003). 0169-4332
11. J. A. Grenko, C. L. Reynolds, Jr., R. Schlesser, J. J. Hren, K. Bachmann, and Z. Sitar, J. Appl. Phys. 0021-8979 10.1063/1.1788841 96, 5185 (2004).
12. A. R. Stonas, P. Kozodoy, H. Marchand, P. Fini, S. P. Denbaars, U. K. Mishra, and E. L. Hu, Appl. Phys. Lett. 0003-6951 10.1063/1.1318726 77, 2610 (2000).
13. T. Rotter, D. Mistele, J. Stemmer, F. Fedler, J. Aderhold, J. Graul, V. Schwegler, C. Kirchner, M. Kamp, and M. Heuken, Appl. Phys. Lett. 0003-6951 10.1063/1.126822 76, 3923 (2000).
14. J. E. Borton, C. Cai, M. I. Nathan, P. Chow, J. M. Van Hove, A. Wowchak, and H. Morko̧, Appl. Phys. Lett. 0003-6951 10.1063/1.1289807 77, 1227 (2000).
15. B. Yang and P. Fay, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1767828 22, 1750 (2004).
16. J. A. Bardwell, J. B. Webb, H. Tang, J. Fraser, and S. Mosia, J. Appl. Phys. 0021-8979 10.1063/1.1352684 89, 4142 (2001).
17. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 0003-6951 10.1063/1.118322 70, 420 (1997).
18. K. Leung, A. F. Wright, and E. B. Stechel, Appl. Phys. Lett. 0003-6951 10.1063/1.123018 74, 2495 (1999).
19. C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, Appl. Phys. Lett. 0003-6951 10.1063/1.124153 74, 3537 (1999).
20. P. Visconti, K. M. Jones, M. A. Reshchikov, R. Cingolani, H. Morko̧, and R. J. Molnar, Appl. Phys. Lett. 0003-6951 10.1063/1.1329330 77, 3532 (2000).
21. Y. T. Moon, C. Liu, J. Xie, X. Ni, Y. Fu, H. Morko̧, L. Zhou, and D. J. Smith, Appl. Phys. Lett. 0003-6951 10.1063/1.2219093 89, 024103 (2006).