Field emission from quantum size GaN structures

Applied Surface Science

Volumn 220, Issue 1-4, 2003, Pages 46-50

  Yilmazoglu, O ^a   Pavlidis, D ^b   Litvin, Yu M ^c   Hubbard, S ^b   Tiginyanu, I M ^b   Mutamba, K ^a   Hartnagel, H L ^a   Litovchenko, V G ^c   Evtukh, A ^c  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF MICHIGAN   (United States)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

GaN field emitter; Quantum size

Indexed keywords

ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

FIELD EMISSIONS;

GALLIUM NITRIDE;

EID: 0142186110     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00750-5     Document Type: Article

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