Nanoscale GaN whiskers fabricated by photoelectrochemical etching

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5185-5188

  Grenko, J A ^a   Reynolds Jr , C L ^a   Schlesser, R ^a   Hren, J J ^a   Bachmann, K ^a   Sitar, Z ^a   Kotula, P G ^b  

^a North Carolina State University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; CHEMICAL REACTIVITY; PHOTOELECTROCHEMICAL ETCHING; WHISKERS;

CONCENTRATION (PROCESS); CRYSTAL WHISKERS; ETCHING; GROWTH (MATERIALS); PH EFFECTS; PHOTOCURRENTS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 9744246777     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1788841     Document Type: Article

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