In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN/GaN cracks

Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

  Moon, Y T ^a   Liu, C ^a   Xie, J ^a   Ni, X ^a   Fu, Y ^a   Morkoc H ^a   Zhou, Lin ^a   Smith, David J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRACKS; EPITAXIAL GROWTH; ETCHING; NUCLEATION; PATTERN RECOGNITION; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ALGAN/GAN; PENDEOEPITAXY; SITU THERMAL ETCHING;

GALLIUM NITRIDE;

EID: 33746045281     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219093     Document Type: Article

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