Nanostructuring induced enhancement of radiation hardness in GaN epjlayers

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Ursaki, V V ^b   Tiginyanu, I M ^a   Volciuc, O ^b   Popa, V ^b   Skuratov, V A ^c   Morkoc H ^d,e  

^a INSTITUTE OF APPLIED PHYSICS   (Moldova)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d Virginia Commonwealth University   (United States)

^e VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL NANOSTRUCTURING; RADIATION HARD DEVICES;

ELECTROCHEMISTRY; GALLIUM NITRIDE; HARDNESS; NANOSTRUCTURES; RAMAN SCATTERING;

EPILAYERS;

EID: 34247331014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2723076     Document Type: Article

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