Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 °C in N2 or wet O2 ambient

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 80, Issue 4, 2000, Pages 647-659

  Nipoti, R ^a   Parisini, A ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034175253     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/13642810008209772     Document Type: Article

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