Hot-electron-induced degradation in BCB-and SiN-passivated Al 0.25Ga 0.75As/In 0.2Ga 0.8As PHEMTs

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 3, 2007, Pages 488-492

  Chee, Leong Tan ^a,b   Hong, Wang ^a,b   Radhakrishnan, K ^a,b  

^a IEEE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Breakdown walkout; Hot electrons; Low k benzocyclobutene (BCB); Silicon nitride (SiN)

Indexed keywords

BREAKDOWN WALKOUT; ELECTRON STRESS; LOSS TANGENT; LOW-K BENZOCYCLOBUTENE;

ELECTRIC POTENTIAL; HOT ELECTRONS; PERMITTIVITY; SILICON NITRIDE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 35949004381     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.907413     Document Type: Article

References (25)

1. 0.85As pHEMTs using a low-k BCB passivation," IEEE Electron Device Lett., vol. 23, no. 5, pp. 243-245, May 2002.
2. H.-C. Chiu, T.-J. Yeh, S.-C. Yang, M.-J. Hwu, and Y.-J. Chan, "High performance BCB-bridged AlGaAs/InGaAs power HFETs," IEEE Trans. Electron Devices, vol. 50, no. 6, pp. 1532-1536, Jun. 2003.
3. W.-S. Sul, H.-J. Han, B.-O. Lim, B.-H. Lee, S.-D. Lee, M.-R. Kim, S.-D. Kim, and J.-K. Rhee, "Analysis on the low-k benzo-cyclo-butene passivation of pseudomorphic high electron mobility transistors," in Proc. Optoelectron. Microelectron. Mater. Devices, Dec. 2002, pp. 349-352.
4. T. Shimura, T. Satoh, Y. Hasegawa, and J. Fukay, "A high power density, 6 W MMIC for Ku/K-band applications," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2003, pp. 851-854.
5. J. J. Komiak, W. Kong, and K. Nichols, "High efficiency wideband 6 to 18 GHz PHEMT power amplifier MMIC," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2002, pp. 905-907.
6. Y. C. Chen, C. S. Wu, C. K. Pao, M. Cole, Z. Bardai, L. D. Hou, T. A. Midford, and T. C. Cisco, "High PAE pseudomorphic InGaAs/AlGaAs HEMT X-band high power amplifiers," in Proc. GaAs IC Symp., Oct. 29-Nov. 1, 1995, pp. 281-283.
7. M. Borgarino, R. Menozzi, Y. Baeyens, P. Cova, and F. Fantini, "Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's," IEEE Trans. Electron Devices, vol. 45, no. 2, pp. 366-372, Feb. 1998.
8. R. Menozzi, "Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimeter-wave applications," Semicond. Sci. Technol., vol. 13, no. 10, pp. 1053-1063, Oct. 1998.
9. C. Canali, P. Cova, E. De Bortoli, F. Fantini, G. Meneghesso, R. Menozzi, and E. Zanoni, "Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT's induced by hot-electrons," in Proc. IEEE Int. Reliab. Phys. Symp., Apr. 1995, pp. 205-211.
10. G. Meneghesso, C. Canali, P. Cova, E. De Bortoli, and E. Zanoni, "Trapped charge modulation: A new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's," IEEE Electron Device Lett., vol. 17, no. 5, pp. 232-234, May 1998.
11. Y. C. Chou, G. P. Li, K. K. Yu, P. Chu, L. D. Hou, C. S. Wu, and T. A. Midford, "Hot carrier reliability in high-power PHEMT's," in Proc. GaAs IC Symp., Nov. 1996, pp. 46-49.
12. R. Menozzi, P. Cova, C. Canali, and F. Fantini, "Breakdown walkout in pseudomorphic HEMT's," IEEE Trans. Electron Devices, vol. 43, no. 4, pp. 543-546, Apr. 1996.
13. D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, and C. Canali, "Electric-field-related reliability of AlGaAs/GaAs power HFETs: Bias dependence and correlation with breakdown," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1929-1937, Sep. 2001.
14. G. Meneghesso, A. Mion, Y. Haddab, M. Pavesi, M. Manfredi, C. Canali, and E. Zanoni, "Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing," J. Appl. Phys., vol. 82, no. 11, pp. 5547-5554, Dec. 1997.
15. A. Watanabe, K. Fujimoto, M. Oda, T. Nakatsuka, and A. Tamura, "Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect," in Proc. IEEE Int. Reliab. Phys. Symp., Mar. 31-Apr. 2, 1992, pp. 127-130.
16. H. Hasegawa, K. Katsukawa, T. Itoh, T. Noguchi, and Y Kaneko, "High reliability power GaAs MESFET under RF overdrive condition," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., Jun. 1993, pp. 289-292.
17. S. R. Bahl and J. A. del Alamo, "A new drain-current injection technique for the measurement of off-state breakdown voltage in FET's," IEEE Trans. Electron Devices, vol. 40, no. 8, pp. 1558-1560, Aug. 1993.
18. A. Kuliev, C. Lee, W. Lu, E. Piner, S. R. Bahl, and I. Adesida, "A study of on-state and off-state breakdown voltages in GaN MESFETs," in Proc. IEEE Cornell Conf. High Perform. Devices, Aug. 2000, pp. 110-114.
19. Y. C. Chou and G. P. Li, "Off-state breakdown walkout in high-power PHEMT's," in Proc. GaAs IC Symp., Nov. 1996, pp. 42-45.
20. P. C. Chao, M. Shur, M. Y. Kao, and B. R. Lee, "Breakdown walkout in AlGaAs/GaAs HEMTs," IEEE Trans. Electron Devices, vol. 35, no. 3, pp. 738-740, Mar. 1992.
21. C. Canali, C. Tedesco, E. Zanoni, F. Magistrali, and M. Sangalli, "Electron detrapping enhanced by electric field in AlGaAs/GaAs HEMTs," Electron. Lett., vol. 26, no. 5, pp. 313-315, Mar. 1990.
22. G. Meneghesso, E. De Bortoli, D. Sala, and E. Zanoni, "Failure mechanisms of AlGaAs/InGaAs pseudomorphic HEMT's: Effects due to hot electrons and modulation of trapped charge," Microelectron. Reliab., vol. 37, no. 7, pp. 1121-1129, Jul. 1997.
23. R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, M. Van Hove, and F. Fantini, "The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMTs and InP-HEMTs," in Proc. IEEE Int. Reliab. Phys. Symp., Apr. 1997, pp. 242-247.
24. 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTS," Solid State Electron., vol. 42, no. 5, pp. 749-753, May 1998.
25. M. Borgarino, R. Menozzi, D. Dieci, L. Cattani, and F. Fantini, "Reliability physics of compound semiconductor transistors for microwave applications," Microelectron. Reliab., vol. 41, no. 1, pp. 21-30, Jan. 2001.