High performance BCB-bridged AlGaAs/InGaAs power HFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 6, 2003, Pages 1532-1536

  Chiu, Hsien Chin ^a   Yeh, Tsung Jung ^a   Yang, Shih Cheng ^a   Hwu, Ming Jyh ^a   Chan, Yi Jen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

BCB; DCFET; Power; Reliability

Indexed keywords

ALUMINUM COMPOUNDS; BUTENES; DOPING (ADDITIVES); LEAKAGE CURRENTS; PASSIVATION; SILICON NITRIDE;

ADJACENT CHANNEL POWER RATIOS (ACPR);

GATES (TRANSISTOR);

EID: 0042164587     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813504     Document Type: Article

References (11)

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