Enhanced power performance of enhancement-mode Al 0.5Ga 0.5As/In 0.15Ga 0.85As pHEMTs using a low-k BCB passivation

IEEE Electron Device Letters

Volumn 23, Issue 5, 2002, Pages 243-245

  Chiu, Hsien Chin ^a,b   Hwu, Ming Jyh ^a,b   Yang, Shih Cheng ^a,b   Chan, Yi Jen ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

BCB; Enhancement mode; Low k passivation; pHEMTs

Indexed keywords

BENZOCYCLOBUTENE PASSIVATION LAYER; DIELECTRIC LOSS TANGENT; DIELECTRIC PERMITTIVITY; ENHANCEMENT MODE; INPUT POWER SWING; POWER ADDED EFFICIENCY;

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; PASSIVATION; PERFORMANCE; PERMITTIVITY; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING ORGANIC COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036574930     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.998864     Document Type: Letter

References (8)

1. Suppression of I-V kink in doped-channel InAlAs/InGaAs/InP heterostructure field-effect transistor (HFET) using silicon nitride passivation
2. Suppression of gate leakage current in n-AlGaAs/GaAs power HEMTs
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
4. 3 plasma
5. 64% efficiency enhancement-mode power heterojunction FET for 3.5 V Li-ion battery operated personal digital cellular phones
6. Greater than 70% enhancement-mode GaAs HJFET power amplifier MMIC with extremely low leakage current
7. Dark current reduction in APD with BCB passivation
8. Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching