The fabrication technique and electrical properties of a free-standing GaN nanowire

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 2, 2005, Pages 245-247

  Yu, H Y ^a   Kang, B H ^a   Park, C W ^a   Pi, U H ^a   Lee, C J ^b   Choi, S Y ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTROPHORESIS; ETCHING; INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; SCHOTTKY BARRIER DIODES; SILICA; SILICON NITRIDE;

BAND GAP; NANORELAYS; NANOWIRES; ROOM TEMPERATURE (RT);

GALLIUM NITRIDE;

EID: 18844399616     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-005-3276-3     Document Type: Article

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