OFF-state degradation in drain-extended NMOS transistors: Interface damage and correlation to dielectric breakdown

IEEE Transactions on Electron Devices

Volumn 54, Issue 10, 2007, Pages 2669-2678

  Varghese, Dhanoop ^a   Kufluoglu, Haldun ^a   Reddy, Vijay ^b   Shichijo, Hisashi ^b   Mosher, Dan ^b   Krishnan, Srikanth ^b   Alam, Muhammad Ashraful ^a  

^a PURDUE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Bond dispersion (B D) model; Drain extended devices; Gate dielectric breakdown; Hot carrier degradation; Interface damage; OFF state degradation; Si O bonds; Universal degradation

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TUNNELING; GATE DIELECTRICS; HOT CARRIERS; IMPACT IONIZATION; MATHEMATICAL MODELS;

BOND-DISPERSION MODEL; DRAIN-EXTENDED DEVICES; OFF-STATE DEGRADATION; UNIVERSAL DEGRADATION;

MOSFET DEVICES;

EID: 35148850946     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.904587     Document Type: Article

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