Oxide Reliability of Drain Engineered I/O NMOS from Hot Carrier Injection

IEEE Electron Device Letters

Volumn 24, Issue 11, 2003, Pages 686-688

  Luo, Yuhao ^a   Nayak, Deepak ^a   Gitlin, Daniel ^a   Hao, Ming Yin ^b   Kao, Chia Hung ^c   Wang, Chien Hsun ^c  

^a XILINX INC   (United States)

^b America Customer Engineering   (Taiwan)

^c R and D Center   (Taiwan)

Author keywords

Hot carrier injection; I O NMOS; Oxide integrity; TDDB

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; ELECTRONIC STRUCTURE; HOT CARRIERS; LEAKAGE CURRENTS;

DRAIN VOLTAGE; HOT CARRIER INJECTION (HCI); OXIDE INTEGRITY;

MOS DEVICES;

EID: 0242493750     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.818890     Document Type: Article

References (7)

1. M. Kinugawa, M. Kakuma, S. Yokogawa, and K. Hashimoto, "Submicro MLDD NMOSFET for 5 V operation," in VLSI Symp. Tech. Dig., 1985, pp. 116-117.
2. T. Hori, K. Kurimoto, T. Yabu, and G. Fuse, "A new submicron MOSFET with LATID (large-anglertilt implanted drain) structure," in VLSI Symp. Tech. Dig., 1988, pp. 15-16.
3. D. Nayak, M. Y. Hao, J. Umali, and R. Rakkhit, "A comprehensive study of performance and reliability of P, As, and hybrid As/P n LDD junctions for deep-submicron CMOS logic technology," IEEE Electron Device Lett., vol. 18, pp. 281-283, June 1997.
4. H. C.-H. Wang, C. H. Diaz, B.-K. Liew, J. S.-C. Sun, and T. Wang, "Hot carrier reliability improvement by utilizing phosphorus transient enhanced diffusion for input/output devices of deep submicron CMOS technology," IEEE Electron Device Lett., vol. 21, pp. 598-600, 2000.
5. I. Chen, J. Y. Choi, T. Chan, and C. Hu, "The effect of channel hot-carrier stressing on gate-oxide integrity in MOSFET's," IEEE Trans. Electron Devices, vol. 35, pp. 2253-2258, Dec. 1988.
6. B. Kaczer, F. Crupi, R. Degraeve, Ph. Roussel, C. Ciofi, and G. Groeseneken, "Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits," in IEDM Tech. Dig., 2002, p. 171.
7. T. Wang, L.-P. Chiang, N.-K. Zous, C.-H. Hsu, L.-Y. Huang, and T.-S. Chao, "A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFET's," IEEE Trans. Electron Devices, vol. 46, pp. 1877-1882, Sept. 1999.