Mechanism for hot-carrier-induced interface trap generation in MOS transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 85-88

  Chen, Zhi ^a   Hess, Karl ^a   Lee, Jinju ^a   Lyding, Joseph W ^a   Rosenbaum, Elyse ^a   Kizilyalli, Isik ^a   Chetlur, Sundar ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DEUTERIUM; ELECTRON TRAPS; HOT CARRIERS; INTERFACES (MATERIALS); MOLECULAR VIBRATIONS; SCANNING TUNNELING MICROSCOPY; SILICA;

DEUTERIUM ISOTOPE EFFECT; HOT CARRIER STRESSING; INTERFACE TRAP GENERATION; VIBRATIONAL EXCITATION;

MOSFET DEVICES;

EID: 0033311562     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)