High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 190-193

  Xu, Shuming ^a   Baiocchi, Frank ^a   Safar, Hugo ^a   Lott, Joel ^a   Shibib, Ayman ^a   Xie, Zhijian ^a   Nigam, Tanya ^a   Jones, Bailey ^a   Thompson, Brain ^a   Desko, John ^a   Gammel, Peter ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; HOT CARRIERS; POWER AMPLIFIERS; THERMODYNAMIC STABILITY;

HOT CARRIER INJECTION (HCI);

MOSFET DEVICES;

EID: 0041513453     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A. Wood, C. Dragon, and W. Burger, "High performance Si LDMOS technology for 2Ghz RF power amplifier applications", in IEDM Tech. Dig., pp. 87-90, 1996;
2. I. Yoshida, "2-Ghz Si power MOSFET Technology," IEDM Tech. Dig., 1997;
3. S. Xu and P. Foo, "RF LDMOS with extreme low parasitic feedback capacitance and high hot carrier immunity", in IEDM Tech. Dig., pp. 201-204, 1999;
4. S. Xu et al., "Dummy gated Radio Frequency VDMOSFETs with high breakdown voltage and low feedback capacitance", in IEEE ISPSD, pp. 385-388, 2000.
5. M. Shindo, M. Morikawa, T. Fujioka, K. Nagura, K. Kurotani, K. Odaira, T. Uchiyama, and I. Yoshida, "High power LDMOS for cellular base station applications", in ISPSD, pp. 107-110, 2001;