Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 84-94

  Wu, Ernest ^a   Nowak, Edward ^a   Lai, Wing ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTER SIMULATION; DATA REDUCTION; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON TUNNELING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; STRESS ANALYSIS;

DRAIN BIAS STRESSES; DRAIN VOLTAGE; EDGE TUNNELING; OFF STAND MODES; VOLTAGE SPLITTING;

THIN FILM DEVICES;

EID: 3042606116     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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