Universality of off-state degradation in drain extended NMOS transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Varghese, D ^a   Kufluoglu, H ^a   Reddy, V ^b   Shichijo, H ^b   Krishnan, S ^b   Alam, M A ^a  

^a PURDUE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-TO-BAND TUNNELING; LOWER STRESS; NMOS TRANSISTORS;

CIVIL AVIATION; DEGRADATION; ELECTRON DEVICES; HOT CARRIERS; MOSFET DEVICES; SILICON COMPOUNDS; SULFATE MINERALS; TRANSISTORS;

IMPACT IONIZATION;

EID: 46049104434     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346895     Document Type: Conference Paper

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