A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 457-466

  Koike, Norio ^a   Tatsuuma, Kenichiro ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Hot carriers; MOSFETs; Reliability modeling; Semiconductor device reliability

Indexed keywords

COMPUTER SIMULATION; DATA REDUCTION; HOT CARRIERS; IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SILICA;

CIRCUIT-LEVEL RELIABILITY; DRAIN EDGE; RELIABILITY MODELING; SEMICONDUCTOR DEVICE RELIABILITY;

MOSFET DEVICES;

EID: 11144226221     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.831992     Document Type: Article

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