Temperature dependence of impact ionization in submicrometer silicon devices

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2328-2334

  Massey, D J ^a,b   David, J P R ^a,b   Rees, G J ^b  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche breakdown; Dead space; Impact ionization; Multiplication; Silicon; Submicron

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON INJECTION; IMPACT IONIZATION; PHOTOMULTIPLIERS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

AVALANCHE BREAKDOWN; CHYNOWETH'S EXPRESSION; DEAD SPACE CORRECTION; PHOTOMULTIPLICATION; TEMPERATURE SENSITIVITY;

SEMICONDUCTOR DEVICES;

EID: 33846076836     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.881010     Document Type: Article

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