Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2029-2033

  Kim, Young Bae ^a   Kang, Moon Soo ^a   Lee, Taeho ^a   Ahn, Jinho ^a   Choi, Duck Kyun ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HAFNIUM COMPOUNDS; MOS DEVICES; PERMITTIVITY; SILICON COMPOUNDS; SILICON WAFERS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC-LAYER DEPOSITION TECHNIQUE; CAPACITANCE-VOLTAGE MEASUREMENTS; HAFNIUM OXIDE; LEAKAGE CURRENT DENSITIES;

DIELECTRIC MATERIALS;

EID: 0242509093     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1603286     Document Type: Article

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