Valence control method of co-doping for the fabrication of metallic silicon from the first-principles calculations

Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 163-165

  Kawasaki, Tatsuro ^a   Katayama Yoshida, Hiroshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Boron; First principles calculation; Silicon; Valence control

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON ENERGY LEVELS; PHOSPHORUS; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

CODOPING; FIRST-PRINCIPLES CALCULATION;

SEMICONDUCTING SILICON;

EID: 0034978919     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00422-7     Document Type: Conference Paper

References (13)