Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 841-844

  Jiang, Huihua ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Tian, Daxi ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Epitaxial silicon wafers; Ge B codoped silicon; Misfit dislocation

Indexed keywords

BORON; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GERMANIUM; SEMICONDUCTOR DOPING; SUBSTRATES; THICKNESS MEASUREMENT;

BORON-DOPED CZOCHRALSKI (CZ) SILICON WAFERS; GE-B CODOPED SILICON; LATTICE COMPENSATION; VOLUME PRODUCTION;

SILICON WAFERS;

EID: 33645136370     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.209     Document Type: Conference Paper

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