Effect of oxygen precipitation on voids in bulk silicon

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 289-296

  Yu, Xuegong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Xu, Jin ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

FPD; Oxygen precipitation; Self interstitials; Silicon; Voids

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; PRECIPITATION (CHEMICAL); STACKING FAULTS;

VOIDS;

SILICON;

EID: 0037391795     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00920-6     Document Type: Conference Paper

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