Crystal defects in highly boron doped silicon

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages 4041-4044

  Suhren, M ^a   Graf D ^a   Lambert, U ^a   Wagner, P ^a  

^a SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPOSITION EFFECTS; CRYSTAL DEFECTS; SEMICONDUCTOR DOPING;

CRYSTAL ORIGINATED PARTICLES; CRYSTAL PULLING PROCESS; HIGHLY BORON DOPED SILICON;

SILICON WAFERS;

EID: 0031276203     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838132     Document Type: Article

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