Effect of post-growth annealing on the optical properties of InAs / GaAs quantum dots: A tight-binding study

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Santoprete, R ^a,b   Kratzer, P ^c,d   Scheffler, M ^d   Capaz, Rodrigo B ^a   Koiller, Belita ^a  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

^d FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; ELECTRONIC STRUCTURE; GROWTH (MATERIALS); LUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

ONE-PARTICLE ELECTRONIC SPECTRUM; POST-GROWTH ANNEALING; STRAIN FIELDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547610062     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2757205     Document Type: Article

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