The effect of encapsulation on the morphology and chemical composition of InAs/GaAs quantum dots grown by molecular beam epitaxy

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 604-609

  Zhi, D ^a   Wei, M ^a   Dunin Borkowski, R E ^a   Midgley, P A ^a   Pashley, D W ^b   Jones, T S ^b   Joyce, B A ^b   Fewster, P F ^c   Goodhew, P J ^d  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c MALVERN INSTRUMENTS LTD   (United Kingdom)

^d UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Encapsulation; Indium arsenide; Quantum dots; Transmission electron microscopy

Indexed keywords

COMPOSITION; ENCAPSULATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAPS; INDIUM ARSENIDE; MASS TRANSPORT;

MICROELECTRONICS;

EID: 2542426988     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00151-0     Document Type: Conference Paper

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