Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots

Physical Review Letters

Volumn 82, Issue 25, 1999, Pages 5148-5151

  Liao, X Z ^a   Zou, J ^a   Cockayne, D J H ^a   Leon, R ^b   Lobo, C ^c  

^a UNIVERSITY OF SYDNEY   (Australia)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; FINITE ELEMENT METHOD; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; STRESS CONCENTRATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN FIELD DISTRIBUTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032607677     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.82.5148     Document Type: Article

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