Electric field effects in stacked dots

Physica Status Solidi (A) Applied Research

Volumn 190, Issue 2, 2002, Pages 551-554

  Maksimenko, S A ^a,b   Slepyan, G Ya ^a   Hoffmann, A ^a   Bimberg, D ^a  

^a INSTITUTE FOR NUCLEAR PROBLEMS   (Belarus)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CALCULATIONS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

EFFECTIVE MASS CALCULATION; FUNDAMENTAL INTERBAND TRANSITION; GAUSSIAN FLUCTUATION;

ELECTRIC FIELD EFFECTS;

EID: 0036544381     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200204)190:2<551::AID-PSSA551>3.0.CO;2-S     Document Type: Conference Paper

References (14)