Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 19, 2004, Pages 1-4

  Tartakovskii, A I ^a   Makhonin, M N ^a,b   Sellers, I R ^a   Cahill, J ^a   Andreev, A D ^c   Whittaker, D M ^a   Wells, J P R ^a   Fox, A M ^a   Mowbray, D J ^a   Skolnick, M S ^a   Groom, K M ^a   Steer, M J ^a   Liu, H Y ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; INDIUM;

ARTICLE; PHOTON; POLARIZATION; QUANTUM DOT; QUANTUM MECHANICS; THERMOSTABILITY;

EID: 19944433765     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.193303     Document Type: Article

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