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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 540-545

Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots

(5) Heinrichsdorff, F a Grundmann, M a Stier, O a Krost, A a Bimberg, D a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

Annealing; Diffusion; InGaAs GaAs; Intermixing; Quantum dots

Indexed keywords

ANNEALING; CHARGE CARRIERS; GROUND STATE; INTERDIFFUSION (SOLIDS); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; WETTING;

EIGENSTATE ENERGIES; FICKIAN INTERDIFFUSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032477160 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00698-8 Document Type: Article

Times cited : (75)

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