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Volumn 69, Issue 16, 2004, Pages

Control of fine-structure splitting and biexciton binding in In xGa1-xAs quantum dots by annealing

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; INDIUM;

EID: 42749100936     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.161301     Document Type: Article
Times cited : (221)

References (30)
  • 13
    • 33646656053 scopus 로고    scopus 로고
    • note
    • In the PL spectra of some of the samples, emission from the excited exciton state is also visible, with an intensity depending on the confinement energy, i.e., the excited-state splitting. State filling effects are ruled out by the low excitation intensity. This emission appears to be due to a confinement dependent inhibition of the relaxation into the ground state (phonon bottleneck). In fact, the excited state emission vanishes for temperatures above 80 K, for which phonon assisted excitation into higher excited-states and subsequent relaxation is possible, as reported in Ref. 29.
  • 19
    • 33646637660 scopus 로고    scopus 로고
    • note
    • Since the oscillator strength of the |x〉 |y〉 transitions are differing slightly, the excited exciton state is not purely circular polarized, but the consequent alteration of the FWM signal is not significant.
  • 21
    • 33646647738 scopus 로고    scopus 로고
    • note
    • The two fine-structure split states can have slightly different dephasing rates. The smaller the fine-structure splitting gets, the less significant is the difference in the decay rates, so that it can be neglected in the analysis of the beat structures.
  • 22
    • 33646658885 scopus 로고    scopus 로고
    • note
    • T considering the effect of the Indiffusion based annealing on the QD shape.
  • 24
    • 33646648967 scopus 로고    scopus 로고
    • note
    • B>0.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.