Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 23, 2003, Pages

  Santoprete, R ^a,b   Koiller, Belita ^a   Capaz, R B ^a   Kratzer, P ^b   Liu, Q K K ^c   Scheffler, M ^b  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; UNCLASSIFIED DRUG; ZINC;

ARTICLE; ATOM; CALCULATION; ELASTICITY; ELECTRON; ELECTRONICS; ENERGY; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0842278606     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.235311     Document Type: Article

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