Electronic properties of InGaAs/GaAs strained coupled quantum dots modeled by eight-band k · p theory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 1, 2003, Pages 144-149

  Park, Seoung Hwan ^a   Ahn, Doyeol ^b   Lee, Yong Tak ^c   Chuang, Shun Lien ^d  

^a Catholic University of Daegu   (South Korea)

^b University of Seoul   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

^d University of Illinois at Urbana Champaign   (United States)

Author keywords

Eight band model; GaAs; InGaAs; k p theory; Quantum dot

Indexed keywords

BAND STRUCTURE; COMPOSITION; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; GROUND STATE; HAMILTONIANS; HOLE MOBILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CONDUCTION BAND; EIGHT BAND MODEL; INDIUM GALLIUM ARSENIDE; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0038564301     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.144     Document Type: Article

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