Influence of plasma treatment on low-k dielectric films in semiconductor manufacturing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 238, Issue 1-4, 2005, Pages 310-313

  Yang, P ^a   Lu, D ^a,b   Kumar, R ^a,b   Moser, H O ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Atomic force microscopy (AFM); Low k dielectric thin films; Roughness; Synchrotron radiation; X ray reflectivity

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; DIELECTRIC FILMS; PERMITTIVITY; PLASMAS; REFLECTOMETERS; SILICON COMPOUNDS;

LOW-K DIELECTRIC THIN FILMS; PLASMA PROCESSES; PLASMA TREATMENT; X-RAY REFLECTIVITY;

NUCLEAR INSTRUMENTATION;

EID: 25144488188     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.06.068     Document Type: Conference Paper

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