Pulsed laser deposition of zirconium silicate thin films as candidate gate dielectrics

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 1, 2005, Pages 135-139

  Zhu, M ^a   Zhu, J ^a   Liu, J M ^a,b   Liu, Z O ^a  

^a NANJING UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; PHOTOLITHOGRAPHY; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING; SILICA; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM COMPOUNDS;

LASER PULSE REPETITION; NONSTOICHIOMETRIC COMPOSITIONS; PSEUDOBINARY SYSTEMS; TUNNELING CURRENTS;

THIN FILMS;

EID: 10644278817     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-003-2107-7     Document Type: Article

References (14)

1. A.I. Kingon, J.-P. Maria, S.K. Steiffer: Nature 406, 1032 (2000)
2. G.D. Wilk, R.M. Wallace, J.M. Anthony: J. Appl. Phys. 89, 5243 (2001)
3. E.P. Gusev, E. Cartier, D.A. Buchanan, M. Gribelyuk, M. Copel, H. Okom-Schmidt, C.D. Emic: Microelectron. Eng. 59, 341 (2001)
4. G.D. Wilk, R.M. Wallace, J.M. Anthony: J. Appl. Phys. 87, 484 (2000)
5. G. Lucovsky, G.B. Rayner, R.S. Johnson: Microelectron. Reliability 41, 937 (2001)
6. G.D. Wilk, R.M. Wallace: Appl. Phys. Lett. 76, 112 (2000)
7. W.J. Qi, R. Nieh, E. Dharmarajan, B.H. Lee, Y.J. Jeon, L. Kang, K. Onishi, J.C. Lee: Appl. Phys. Lett. 77, 1704 (2000)
8. M.A. Russak, C.V. Jahnes, E.P. Katz: J. Vac. Sci. Technol. A 7, 1248 (1989)
9. S.Q. Wang, J.W. Mayer: J. Appl. Phys. 64, 4711 (1988)
10. X.B. Lu, Z.G. Liu, Y. Yang, H.Q. Ling, J. Zhu, X.P. Wang, H.W. Zhou, B.Y. Nguyen: J. Appl. Phys. accepted
11. K.J. Yang, C.M. Hu: IEEE Trans. Electron. Devices. 46, 1500 (1999)
12. S.W. Nam, J.H. Yoo, H.Y. Kim, S.K. Kang, D.H. Ko, C.W. Yang, H.J. Lee, M.H. Cho, J.H. Ku: J. Vac. Sci. Technol. A 19, 1720 (2001)
13. D.A. Buchanan: IBM J. Res. Dev. 43, 245 (1999)
14. 2 Interface (Science Press, Beijing 1989); in Chinese