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Volumn 38, Issue 6-7, 2007, Pages 777-782

Prospective development in diffusion barrier layers for copper metallization in LSI

Author keywords

Barrier layers materials; Copper interconnection

Indexed keywords

COPPER COMPOUNDS; DIFFUSION; LSI CIRCUITS; METALLIZING;

EID: 34547409945     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.04.011     Document Type: Article
Times cited : (39)

References (41)
  • 1
    • 34547462270 scopus 로고    scopus 로고
    • C.Y. Chang, S.M. Sze, ULSI Technology, McGraw-Hill, 1996
  • 6
    • 0942299997 scopus 로고    scopus 로고
    • Diffusion in silicides: basic approach and practical applications
    • Miglio L., and d'Heurle F. (Eds), World Scientific, Singapore
    • Gas P. Diffusion in silicides: basic approach and practical applications. In: Miglio L., and d'Heurle F. (Eds). Silicides: Fundamentals and Applications (2001), World Scientific, Singapore 34-51
    • (2001) Silicides: Fundamentals and Applications , pp. 34-51
    • Gas, P.1
  • 13
    • 0003650901 scopus 로고
    • American Society For Metals, Westerville, OH
    • Massalski T.B. Binary Phase Diagram (1990), American Society For Metals, Westerville, OH
    • (1990) Binary Phase Diagram
    • Massalski, T.B.1
  • 29
    • 34547432833 scopus 로고    scopus 로고
    • ITRS Special Report: 2004 Update, Solid State Technology, 2005.
  • 36
    • 0003650901 scopus 로고
    • American Society for Metals, Westerville, OH
    • Massalski T.B. Binary Phase Diagram (1990), American Society for Metals, Westerville, OH
    • (1990) Binary Phase Diagram
    • Massalski, T.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.