Crystallization and failure behavior of Ta-TM (TM = Fe, Co) nanostructured/amorphous diffusion barriers for copper metallization

Journal of Electronic Materials

Volumn 35, Issue 1, 2006, Pages 15-21

  Fang, J S ^a   Hsu, T P ^a   Chen, G S ^b  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Amorphous; Barrier layer; Cu metallization; Ta TM film

Indexed keywords

CRYSTALLIZATION; DIFFUSION; INTERMETALLICS; METALLIZING; NANOSTRUCTURED MATERIALS; TANTALUM COMPOUNDS;

AMORPHOUS; BARRIER LAYER; CU METALLIZATION; TA-TM FILM;

AMORPHOUS MATERIALS;

EID: 32644431555     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0178-x     Document Type: Conference Paper

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