Crystallization and failure behavior of Ta-Ni nanostructured/amorphous diffusion barriers for copper metallization

Journal of Electronic Materials

Volumn 33, Issue 10, 2004, Pages 1176-1181

  Fang, J S ^a   Hsu, T P ^a   Chen, G S ^b  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

Amorphous; Barrier layer; Cu metallization; Ta Ni film

Indexed keywords

COPPER; CRYSTALLIZATION; DIFFUSION IN SOLIDS; INTERMETALLICS; METALLIZING; NANOSTRUCTURED MATERIALS; SILICON; SUBSTRATES;

BARRIER LAYERS; BARRIER'S REACTION; DIFFUSION BARRIERS; TA-NI FILM;

THIN FILMS;

EID: 7044263316     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0120-z     Document Type: Conference Paper

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