Ru diffusion barriers

Solid State Technology

Volumn 48, Issue 10, 2005, Pages

  Lee, Eal ^a,b   Truong, Nicole ^a   Iwamoto, Nancy ^a   Prater, Bob ^a   Kardokus, Janine ^a  

^a HONEYWELL   (United States)

^b Honeywell Electronic Materials   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; FILM STRESSES; FOUR-POINT ELECTROPROBES; STRESS GAGES;

ADHESION; COPPER; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY; PHYSICAL VAPOR DEPOSITION; RUTHENIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; STRENGTH OF MATERIALS; X RAY DIFFRACTION;

THIN FILMS;

EID: 27844580660     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (9)

1. N. Iwamoto, N. Truong, E. Lee, "New Metal Layers for Integrated Circuit Manufacture: Experimental and Modeling Studies," Thin Solid Films, 469-470, p. 431, 2004.
2. I. Goswami, R. Laxman, "Transition Metals Show Promise as Copper Barriers," Semiconductor International, 27(5), p. 49, 2004.
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4. K.Y. Lim, Y.S. Lee, Y.D. Chung, I.W. Lyo, C.N. Whang, et al., "Grain Boundary Diffusion of Cu in TiN Film by X-ray Photoelectron Spectroscopy," Appl. Phys. A 70, p. 431, 2000.
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6. Q.-T. Jiang, M.E. Thomas, J. Vac. Sci. Technol. B 19(3), p. 762, 2001.
7. F.J. Blatt, Physics of Electronic Conduction in Solids, McGraw-Hill, New York, p. 236, 1968.
8. S.O. Kasap, Principles of Electronic Materials and Devices, McGraw Hill, New York, Chapter 2, 2002.
9. C. Kittel, Introduction to Solid State Physics, 6th ed., John Wiley & Sons Inc., New York, Chapter 6, 1986.