CVD TiSiN diffusion barrier integration in sub-130 mn technology nodes

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 182-184

  Prindle, C ^a   Brennan, B ^b   Denning, D ^a   Shahvandi, I ^a   Guggilla, S ^c   Chen, Ling ^c   Marcadal, C ^c   Deyo, D ^c   Bhandary, U ^c  

^a MOTOROLA INC   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COPPER; DEPOSITION; INTEGRATED CIRCUIT INTERCONNECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICES; SILICON NITRIDE; TITANIUM NITRIDE; VAPOR DEPOSITION;

BARRIER INTEGRATION; DEVICE FABRICATIONS; DEVICE TECHNOLOGIES; HIGH-VOLUME PRODUCTION; IONIZED PHYSICAL VAPOR DEPOSITION; RELIABILITY PROPERTIES; SURFACE CLEANLINESS; TITANIUM-SILICON-NITRIDE;

DIFFUSION BARRIERS;

EID: 84961717463     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014927     Document Type: Conference Paper

References (7)

1. International Technology Roadmap for Semiconductors, 2001 Edition.
2. I. Shahvandi, et al., "Development of CVD TiN(Si) for Advanced Cu Barrier Applications," Proc. Adv. Metallization Conf (2001).
3. S.Q. Xiao, et. al., Mat. Res. Soc ULSI Conf. Proc (2000), pp. 295-300.
4. K. Musaka, et al., Thermal Stress and Reliability Characterization of Barriers for Cu Interconnects.
5. M. Eizwnberg, et. al., J. Vac. Sci. Technol. A13, p. 590 (1995).
6. T. Harada, et. al. Conf. Proc. ULSI XIV, 1999, Materials Research Society, p. 329.
7. C. Marcadal, et. al., "Integration of Thin CVD TiSiN Barriers in Cu Interconnects", Proc. Adv. Metallization Conf (2001).