A comprehensive study on the soft-error rate of flip-flops from 90-nm production libraries

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 1, 2007, Pages 84-96

  Heijmen, Tino ^a   Roche, Philippe ^b   Gasiot, Gilles ^b   Forbes, Keith R ^c   Giot, Damien ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

90 nm process; Accelerated test; Alpha particles; Flip flops (FFs); Neutrons; Process variations; Radiation; Sequential; Soft error rate (SER)

Indexed keywords

APPROXIMATION THEORY; CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; DIGITAL LIBRARIES; INTEGRATED CIRCUITS; THRESHOLD VOLTAGE;

SOFT ERROR RATE (SER); STATIC RANDOM ACCESS MEMORIES; THEORETICAL RESULTS;

FLIP FLOP CIRCUITS;

EID: 34547254841     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.897517     Document Type: Conference Paper

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