A review of DASIE code family: Contribution to SEU/MBU understanding

Proceedings - 11th IEEE International On-Line Testing Symposium, IOLTS 2005

Volumn 2005, Issue , 2005, Pages 87-94

  Hubert, G ^a   Buard, N ^a   Weulersse, C ^a   Carriere, T ^a   Palau, M C ^a   Palau, J M ^b   Lambert, D ^c   Baggio, J ^c   Wrobel, F ^d   Saigne, F ^b   Gaillard, R ^e  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b UNIV MONTPELLIER   (France)

^c DIF   (France)

^d UNIVERSITÉ CÔTE D'AZUR   (France)

^e University of Nice ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

CODE FAMILY; DETAILED ANALYSIS OF SECONDARY ION EFFECT (DASIE); MULTIPLE BIT UPSET (MBU); SINGLE EVENT UPSET (SEU);

DATA STORAGE EQUIPMENT; ERROR DETECTION; IONS; MICROELECTRONICS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 33745498267     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IOLTS.2005.12     Document Type: Conference Paper

References (34)

1. R. Silberberg, "Neutron Generated Single Event Upsets in the Atmosphere", IEEE TNS, Vol. NS-31, 1984.
2. J. Olsen et al., "Neutron-Induced Single Event Upset in Static RAMS Observed at 10 km Flight Altitude", IEEE Trans. Nucl. Sci., Vol 40, No. 2, pp. 74-77, (1993).
3. A. J. Sims et al., "The Single Event Upset Environment for Avionics at High Altitude", IEEE Trans. Nucl. Sci., Vol 41, No. 2, 1994.
4. E. Normand, "Single-Event Effects in Avionics", IEEE Trans. Nucl. Sci., vol. 43, No. 2, pp. 461, (1996).
5. A. Taber and E. Normand, "Single Event Upsets in Avionics", IEEE Trans. Nucl. Sci., vol., No. 6, 1993.
6. C. A. Gossett et al., "Single Event Phenoma in Atmospheric Neutron Environments", IEEE Trans. Nucl. Sci., vol. 40, No. 6, pp. 1845, (1993).
7. "Terrestrial Cosmic Rays and Soft Errors", IBM: Journal of Research and Development, pp. 19-39, January 1996.
8. E. Normand, "Single Event Upset at Ground Level", IEEE Trans. Nucl. Sci., Vol. 43, 1996.
9. T. J. O'Gorman, "The Effect of Cosmic Rays on the Soft Error Rate of a DRAM at Ground Level", IEEE Trans. On Electron Devices, Vol. 41, 1994.
10. E. Normand, "Extensions of the burst generation rate method for wider application to proton/neutron induced single event effects", IEEE Trans. Nucl. Sci., 45, 1998.
11. P. Calvel et al., "An empirical model for predicting proton induced upset", IEEE TNS, Vol. 43, No. 6, 1996.
12. L. D. Edmonds, "Proton SEU cross sections derived from heavy ion test data", IEEE TNS., Vol. 47, No. 5, 2000.
13. M. B. Chadwick et al., "Use of New ENDF/B-VI Proton and Neutron Cross Sections for Single Event Upset Calculations", IEEE Trans. Nucl. Sci., vol. 46, No. 6, pp. 1386, (1999).
14. H. K. Tang et al.,"SEMM-2: A modeling System for Single Event Analysis", IEEE Trans. On Nucl. Sc., vol. 51, No. 6, December 2004.
15. C. Vial et al., "A New Approach for the Prediction of the Neutron-Induced SEU Rate", IEEE TNS., vol 45, 1998.
16. G. Hubert et al., "Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMs", IEEE Trans. Nucl. Sci., Vol. 48, No. 6, 2001.
17. J. R. Ziegler, TRIM, "The Transport of Ions in Matter", IBM-Research.
18. D. Lambert et al., «Neutron-induced SEU in bulk SRAMs: Monte Carlo Simulations including neutron-silicon and neutron-oxygen interactions», NSREC 2005.
19. Ph. Roche et al., "SEU Response of an Entire SRAM Cell Simulated as One Contiguous Three Dimensional Device Domain", IEEE Trans. Nucl. Sci., Vol. 45, 1998.
20. Ph. Roche et al., "Determination on Key Parameters for SEU using Full Cell 3-D SRAM Simulations", IEEE Trans. Nucl. Sci., Vol. 46, pp. 1354-1362, (1999).
21. P.J. McNulty et al., "Threshold Let for SEU Induced by Low Energy Ions", IEEE Trans. Nucl. Sci., Vol. 46, pp. 1370-1377, (1999)
22. G. Hubert et al., "Study of basic mechanisms induced by an ionizing particle on simple structures", IEEE Trans. Nucl. Sci., Vol. 47, pp. 519-526, (2000).
23. J. M. Palau et al., "Device Simulation Study of the SEU Sensitivity of SRAMs to Internal Ion Tracks Generated by Nuclear Reactions". IEEE Trans. Nucl.-Sci, Vol. 48, 2001.
24. K. Castellani-Coulié et al. "Various SEU conditions in SRAMs studied by 3D device simulation", IEEE Trans. Nucl. Sci, december 2001.
25. J-M. Palau et al., "Contribution of device simulation to SER understanding", Annual International Reliability Physics Symposium, Dallas, Texas, 2003.
26. J-M Palau and al., "Monte-Carlo Exploration of Neutron-Induced SEU-Sentitive Volume in SRAMs", IEEE Trans. on Nucl. So., Vol. 49, No. 6, December 2002.
27. T. Merelle et al., "Mone-Carlo Simulations to quantify neutron-induced Multiple Bit Upsets in advanced SRAMs", RADECS 2004.
28. D. Lambert et al., «Neutron-induced SEU in bulk SRAMs in terrestrial environment: simulations and experiments», IEEE TNS. Sc., Vol. 51, No. 6, 2004.
29. C. Weulersse et al., "DASIE Analytical Version: A predictive tool for Neutrons, Protons and Heavy ions induced SEU Cross Section", Presented to RADECS 2005.
30. H. Kobayashi et al., "Comparison Between Neutron-Induced System-SER and Accelerated-SER in SRAMs", IEEE 42nd Annual IRPS, Phoenix, 2004.
31. J. Maiz et al., "Characterisation of Multi-bit Soft Error events in advanced SRAMs", IEDM, 2003.
32. P. Hazucha et al., "Neutron Soft Error Rate Measurement in a 90nm CMOS Process and Scaling Trends in SRAM from 0.25um to 90nm Generation", IEDM, 2003.
33. K. Johansson et al., "Neutron Induced Single-Word Multiple-bit Upset in SRAM", IEEE TNS, vol. 46, No. 6, 1999.
34. N. Hess et al., "Cosmic-Ray Neutron Demography", J. Geophysical Research, p.665, March 1961.